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Dual Port Read/Write SRAM
- Based on patented CrossLink™ technology
- 50% smaller than the competition
- Reduces array power by 50%
- Proven in silicon
- Built on TSMC 0.13µ technology
| Configuration |
1k x 32 |
512 x 32 |
| Height (µm) |
322.390 |
181.590 |
| Width (µm) |
615.670 |
615.670 |
| Area (mm2) |
0.198 |
0.112 |
| Write Power (mW) |
5.4 |
4.41 |
| Read Power (mW) |
5.4 |
4.41 |
| Access (ns) |
1.71 |
1.70 |
Other hand crafted configurations are also available upon request.
For ordering information contact sales@valence-inc.com
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All designs are created using standard layout logic. No layout cheats are used in any of our designs making Valence memories more manufacturable with a higher yield.
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Valence, Inc was founded in 1993 specializing in embedded memory design. Our key personnel have over 33 years experience in leading-edge memories. We offer memory compilers, custom memories and design services.
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CrossLink™ - patented technology
Valence has developed an innovative memory design that can substantially reduce the area of a memory. The reduced area is achieved through design techniques without compromising the robustness of the memory cell. By applying our patented CrossLink design to a traditional Dual Port SRAM we are able to reduce our memory cell size by 32%.
In addition to reducing your cost, CrossLink reduces array power, reduces sensing noise, improves performance and allows for a more robust design.
Glider - patented technology
Reduces array power, reduces sensing noise, improves performance and allows for a more robust design.
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Questions? Comments? email
feedback@valence-inc.com
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